- Производство :
- Package / Case :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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2,604
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | DIODE GEN PURP 600V 15A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 15A | 1.8V @ 15A | 150µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 80ns | -55°C ~ 175°C | - | |||
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3,567
Сегодня корабль + бесплатная ночная доставка
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Rohm Semiconductor | DIODE GEN PURP 600V 15A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Standard | 15A | 2.8V @ 30A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | 150°C (Max) | - | |||
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1,066
Сегодня корабль + бесплатная ночная доставка
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Rohm Semiconductor | DIODE SILICON 650V 15A TO247 | - | Active | Tube | Through Hole | TO-247-3 | TO-247 | Silicon Carbide Schottky | 15A | 1.55V @ 15A | 300µA @ 600V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 550pF @ 1V, 1MHz |
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