- Производство :
- Package / Case :
- Supplier Device Package :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | |
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3,761
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | DIODE GEN PURP 1KV 15A TO220 | - | Active | Tube | Through Hole | TO-220-3 | TO-220 [K] | Standard | 15A | 2.3V @ 15A | 250µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 260ns | -55°C ~ 175°C | |||
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2,620
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | DIODE GEN PURP 1KV 15A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 15A | 2.3V @ 15A | 250µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 260ns | -55°C ~ 175°C | |||
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2,326
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | DIODE GEN PURP 650V 15A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220 | Standard | 15A | 2.3V @ 15A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | 47ns | -40°C ~ 175°C |
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