- Packaging :
- Voltage - Forward (Vf) (Max) @ If :
- Capacitance @ Vr, F :
15 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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3,817
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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1,890
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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3,583
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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1,889
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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3,793
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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1,454
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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3,631
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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1,267
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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2,517
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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2,718
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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645
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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1,219
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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2,067
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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3,810
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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1,719
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | - | Active | Tape & Reel (TR) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 1V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 15pF @ 4V, 1MHz |
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