- Packaging :
- Package / Case :
- Supplier Device Package :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
9 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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1,083
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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731
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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3,105
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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3,073
Сегодня корабль + бесплатная ночная доставка
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Micro Commercial Co | DIODE GEN PURP 200V 6A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1V @ 6A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | |||
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2,744
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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985
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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3,956
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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2,534
Сегодня корабль + бесплатная ночная доставка
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Comchip Technology | DIODE GEN PURP 200V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz | |||
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2,768
Сегодня корабль + бесплатная ночная доставка
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Comchip Technology | DIODE GEN PURP 200V 6A R6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 125°C | 100pF @ 4V, 1MHz |
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