- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
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ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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3,193
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | DIODE GEN PURP 600V 1A AXIAL | - | Active | Bulk | Through Hole | A, Axial | - | Standard | 1A | 1.6V @ 3A | 500nA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 25pF @ 12V, 1MHz | |||
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3,383
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | DIODE GEN PURP 600V 1A AXIAL | - | Active | Bulk | Through Hole | A, Axial | Axial | Standard | 1A | 1.3V @ 1A | 1µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 250ns | -65°C ~ 175°C | 25pF @ 12V, 1MHz |
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