- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
12 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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715
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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3,112
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.7V @ 10A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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980
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.3V @ 10A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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1,879
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 975mV @ 10A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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1,748
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 975mV @ 10A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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3,638
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 975mV @ 10A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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1,598
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 975mV @ 10A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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2,807
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 16A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 16A | 975mV @ 8A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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3,287
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 16A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 16A | 975mV @ 8A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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2,913
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 20A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 20A | 1.3V @ 10A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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1,216
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 16A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 16A | 975mV @ 8A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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3,204
Сегодня корабль + бесплатная ночная доставка
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Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 16A TO220AB | - | Active | Tube | Through Hole | TO-220-3 | TO-220AB | Standard | 16A | 975mV @ 8A | 10µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz |
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