- Part Status :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
7 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,491
Сегодня корабль + бесплатная ночная доставка
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 6A P600 | - | Obsolete | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 1.3V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 200ns | -50°C ~ 125°C | - | ||
|
|
1,796
Сегодня корабль + бесплатная ночная доставка
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.7V @ 6A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 65pF @ 4V, 1MHz | |||
|
|
|
3,425
Сегодня корабль + бесплатная ночная доставка
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1V @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
|
3,808
Сегодня корабль + бесплатная ночная доставка
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 150pF @ 4V, 1MHz | |||
|
|
2,765
Сегодня корабль + бесплатная ночная доставка
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 1.7V @ 6A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 50pF @ 4V, 1MHz | |||
|
|
|
1,217
Сегодня корабль + бесплатная ночная доставка
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 6A P600 | - | Active | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
|
|
2,109
Сегодня корабль + бесплатная ночная доставка
|
SMC Diode Solutions | DIODE GEN PURP 600V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 950mV @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -65°C ~ 175°C | 150pF @ 4V, 1MHz |
Страница 1 / 1
