- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
4 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,939
Сегодня корабль + бесплатная ночная доставка
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO221AC | - | Active | Cut Tape (CT) | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | Standard | 3A (DC) | 1.1V @ 3A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | -55°C ~ 175°C | 19pF @ 4V, 1MHz | |||
|
|
|
3,057
Сегодня корабль + бесплатная ночная доставка
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO221AC | - | Active | Cut Tape (CT) | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | Standard | 3A (DC) | 1.1V @ 3A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | -55°C ~ 175°C | 19pF @ 4V, 1MHz | |||
|
|
|
2,731
Сегодня корабль + бесплатная ночная доставка
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 2A DO221AC | - | Active | Cut Tape (CT) | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | Standard | 2A (DC) | 1.1V @ 2A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | -55°C ~ 175°C | 12pF @ 4V, 1MHz | |||
|
|
|
2,955
Сегодня корабль + бесплатная ночная доставка
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 2A DO221AC | - | Active | Cut Tape (CT) | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | Standard | 2A (DC) | 1.1V @ 2A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | -55°C ~ 175°C | 12pF @ 4V, 1MHz |
Страница 1 / 1
