- Производство :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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ПОЛУЧИТЬ ЦИТАТЫ |
3,196
Сегодня корабль + бесплатная ночная доставка
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STMicroelectronics | DIODE SILICON 600V 10A D2PAK | - | Obsolete | Cut Tape (CT) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 150µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 650pF @ 0V, 1MHz | ||
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3,009
Сегодня корабль + бесплатная ночная доставка
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Central Semiconductor Corp | DIODE GEN PURP 600V 10A TLM364 | - | Active | Cut Tape (CT) | Surface Mount | 3-SMD, Flat Leads | TLM364 | Standard | 10A | 1.7V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 25ns | -65°C ~ 175°C | 42pF @ 4V, 1MHz |
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