- Part Status :
- Package / Case :
- Supplier Device Package :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
5 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,513
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | DIODE GP 600V 6A MICRODE BUTTON | - | Obsolete | Cut Tape (CT) | Through Hole | Button, Axial | Microde Button | Standard | 6A | 900mV @ 6A | 25µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -65°C ~ 175°C | - | ||
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3,337
Сегодня корабль + бесплатная ночная доставка
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 6A P600 | - | Active | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -55°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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3,774
Сегодня корабль + бесплатная ночная доставка
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 6A P600 | - | Active | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz | |||
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629
Сегодня корабль + бесплатная ночная доставка
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Diodes Incorporated | DIODE GEN PURP 600V 6A R6 | - | Active | Cut Tape (CT) | Through Hole | R6, Axial | R-6 | Standard | 6A | 900mV @ 6A | 10µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -65°C ~ 175°C | - | |||
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3,429
Сегодня корабль + бесплатная ночная доставка
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 6A P600 | - | Active | Cut Tape (CT) | Through Hole | P600, Axial | P600 | Standard | 6A | 900mV @ 6A | 5µA @ 600V | 600V | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | -50°C ~ 150°C | 150pF @ 4V, 1MHz |
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