- Производство :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | |
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2,477
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IXYS | DIODE GEN PURP 600V 20A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 (HA) | Standard | 20A | 2.24V @ 20A | 25µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -55°C ~ 150°C | |||
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1,418
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | DIODE GEN PURP 600V 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Standard | 30A | 2.6V @ 30A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -65°C ~ 150°C |
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