- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Capacitance @ Vr, F :
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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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794
Сегодня корабль + бесплатная ночная доставка
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 8A (DC) | 1.6V @ 2.5A | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 237pF @ 1V, 1MHz | |||
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1,026
Сегодня корабль + бесплатная ночная доставка
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 750mA | 1.74V @ 750mA | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 66pF @ 1V, 1MHz |
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