- Производство :
- Series :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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ПОЛУЧИТЬ ЦИТАТЫ |
1,967
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IXYS | DIODE GEN PURP 1.2KV 30A TO263 | - | Active | Digi-Reel® | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 30A | 1.29V @ 30A | 40µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | 10pF @ 400V, 1MHz | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,313
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | DIODE SCHOTTKY 1200V 8A TO252-2 | thinQ!™ | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | Silicon Carbide Schottky | 8A (DC) | 1.95V @ 8A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 365pF @ 1V, 1MHz |
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