- Производство :
- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- Frequency - Transition :
- Noise Figure (dB Typ @ f) :
- Gain :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Noise Figure (dB Typ @ f) | Gain | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,960
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | RF TRANSISTOR | Automotive, AEC-Q101 | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 800mW | 6-CPH | NPN | 150mA | 12V | 100 @ 50mA, 5V | 7GHz | 3dB @ 1GHz | 9dB | |||
|
|
1,236
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | TRANS NPN BIPO 12V 150MA CPH6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 800mW | 6-CPH | NPN | 150mA | 12V | 100 @ 50mA, 5V | 7GHz | 1.8dB @ 1GHz | 9dB | |||
|
|
2,542
Сегодня корабль + бесплатная ночная доставка
|
Toshiba Semiconductor and Storage | RF SIGE HETEROJUNCTION BIPOLAR N | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 800mW | S-Mini | NPN | 100mA | 5.3V | 200 @ 30mA, 5V | 12.5GHz | 1.45dB @ 1GHz | 11.8dB |
Страница 1 / 1
