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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Noise Figure (dB Typ @ f) | Gain | |
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Toshiba Semiconductor and Storage | RF SIGE HETEROJUNCTION BIPOLAR N | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | TO-243AA | 1W | PW-MINI | NPN | 100mA | 6V | 200 @ 30mA, 5V | 8GHz | 1.25dB @ 1GHz | 10.5dB |
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