- DC Current Gain (hFE) (Min) @ Ic, Vce :
- Frequency - Transition :
- Noise Figure (dB Typ @ f) :
- Gain :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Noise Figure (dB Typ @ f) | Gain | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
1,387
Сегодня корабль + бесплатная ночная доставка
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Toshiba Semiconductor and Storage | TRANS RF NPN 7GHZ 80MA UFM | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 900mW | UFM | NPN | 80mA | 12V | 100 @ 50mA, 5V | 7GHz | 1.45dB @ 20mA, 5V | 12dB | ||
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778
Сегодня корабль + бесплатная ночная доставка
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Toshiba Semiconductor and Storage | RF SIGE HETEROJUNCTION BIPOLAR N | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 900mW | UFM | NPN | 100mA | 5.3V | 200 @ 30mA, 5V | 11.2GHz | 1.45dB @ 1GHz | 12.5dB |
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