- Part Status :
- Mounting Type :
- Supplier Device Package :
- Vce Saturation (Max) @ Ib, Ic :
- Current - Collector Cutoff (Max) :
- DC Current Gain (hFE) (Min) @ Ic, Vce :
4 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
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Toshiba Semiconductor and Storage | TRANS NPN 160V 1.5A TO126N | - | Active | Tube | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | 10W | TO-126N | NPN | 1.5A | 160V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 140 @ 100mA, 5V | 100MHz | ||||
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Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSVII | Active | - | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 1.6W | VS-6 (2.9x2.8) | NPN | 1.5A | 30V | 120mV @ 10mA, 500mA | 100nA (ICBO) | 400 @ 150mA, 2V | - |
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