- Производство :
- Part Status :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ПОЛУЧИТЬ ЦИТАТЫ |
3,526
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET 2N-CH 60V 2.6A 8-SOIC | - | Obsolete | Tape & Reel (TR) | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 900mW | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 2.6A | 160 mOhm @ 2.6A, 10V | 3V @ 250µA | 12nC @ 10V | 200pF @ 30V | |||
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2,548
Сегодня корабль + бесплатная ночная доставка
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Diodes Incorporated | MOSFET 2N-CH 55V 2.6A 8SOIC | - | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.7W | 8-SO | 2 N-Channel (Dual) | Standard | 55V | 2.6A | 130 mOhm @ 3A, 10V | 3V @ 250µA | 8.9nC @ 10V | 218.7pF @ 25V |
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