Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
5 продукты
ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
PHN210,118
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RFQ
3,017
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NXP USA Inc. MOSFET 2N-CH 30V 8SOIC TrenchMOS™ Obsolete Tape & Reel (TR) -65°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V - 100 mOhm @ 2.2A, 10V 2.8V @ 1mA 6nC @ 10V 250pF @ 20V
PHKD3NQ10T,518
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$0.53
RFQ
1,733
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Nexperia USA Inc. MOSFET 2N-CH 100V 3A 8SOIC TrenchMOS™ Active Tape & Reel (TR) -65°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 100V 3A 90 mOhm @ 1.5A, 10V 4V @ 1mA 21nC @ 10V 633pF @ 20V
PHN210T,118
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
739
Сегодня корабль + бесплатная ночная доставка
Nexperia USA Inc. MOSFET 2N-CH 30V 8SOIC TrenchMOS™ Active Digi-Reel® -65°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V - 100 mOhm @ 2.2A, 10V 2.8V @ 1mA 6nC @ 10V 250pF @ 20V
PHN210T,118
За единицу
$0.70
RFQ
1,777
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Nexperia USA Inc. MOSFET 2N-CH 30V 8SOIC TrenchMOS™ Active Cut Tape (CT) -65°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V - 100 mOhm @ 2.2A, 10V 2.8V @ 1mA 6nC @ 10V 250pF @ 20V
PHN210T,118
За единицу
$0.24
RFQ
2,230
Сегодня корабль + бесплатная ночная доставка
Nexperia USA Inc. MOSFET 2N-CH 30V 8SOIC TrenchMOS™ Active Tape & Reel (TR) -65°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 2W 8-SO 2 N-Channel (Dual) Logic Level Gate 30V - 100 mOhm @ 2.2A, 10V 2.8V @ 1mA 6nC @ 10V 250pF @ 20V