- Operating Temperature :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,224
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP6 | 714W | SP6 | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 112A (Tc) | 33 mOhm @ 60A, 20V | 3V @ 3mA | 408nC @ 20V | 7680pF @ 1000V | |||
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2,129
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET 6N-CH 1200V 78A SP6-P | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 370W | SP6-P | 6 N-Channel (3-Phase Bridge) | Standard | 1200V (1.2kV) | 78A | 33 mOhm @ 60A, 20V | 2.2V @ 3mA (Typ) | 148nC @ 20V | 2850pF @ 1000V |
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