- Производство :
- Package / Case :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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2,634
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET 2N-CH 20V 2.1A 6TSOP | Automotive, AEC-Q101, OptiMOS™ | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 500mW | PG-TSOP-6-1 | 2 N-Channel (Dual) | Logic Level Gate, 2.5V Drive | 20V | 2.1A | 70 mOhm @ 2.1A, 4.5V | 1.2V @ 11µA | 2.1nC @ 4.5V | 419pF @ 10V | ||||
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2,204
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET 2P-CH 80V 2.1A 8SOIC | PowerTrench® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.6W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 80V | 2.1A | 183 mOhm @ 2.1A, 10V | 3V @ 250µA | 19nC @ 10V | 879pF @ 40V |
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