- Производство :
- Series :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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3,078
Сегодня корабль + бесплатная ночная доставка
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Vishay Siliconix | MOSFET 2N-CH 40V 9.2A 8SO | TrenchFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 3.1W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 40V | 9.2A | 20 mOhm @ 10A, 10V | 2.5V @ 250µA | 15nC @ 10V | 580pF @ 20V | |||
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3,806
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET 2P-CH 30V 9.2A 8SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | 9.2A | 16.3 mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V | |||
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2,031
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET 2P-CH 12V 9.2A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 12V | 9.2A | 17 mOhm @ 9.2A, 4.5V | 900mV @ 250µA | 57nC @ 4.5V | 3450pF @ 10V |
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