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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies | MOSFET 2N-CH 30V 6.5A 8SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 29 mOhm @ 6.9A, 10V | 3V @ 250µA | 33nC @ 10V | 755pF @ 25V |
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