- Производство :
- Series :
- Operating Temperature :
- Package / Case :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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2,286
Сегодня корабль + бесплатная ночная доставка
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STMicroelectronics | MOSFET 2N-CH 60V 4A 8-SOIC | STripFET™ | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 4A | 55 mOhm @ 2A, 10V | 2.5V @ 250µA | 15nC @ 4.5V | 1030pF @ 25V | |||
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2,482
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET N/P-CH 60V ECH8 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1.5W | 8-ECH | N and P-Channel | Logic Level Gate, 4V Drive | 60V | 4.7A, 3.5A | 55 mOhm @ 2A, 10V | - | 18nC @ 10V | 955pF @ 20V |
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