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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1 Ohm @ 500mA, 10V | 3.1V @ 250µA | 17pF @ 25V |
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