- Производство :
- Series :
- Package / Case :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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2,906
Сегодня корабль + бесплатная ночная доставка
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Diodes Incorporated | MOSFET BVDSS: 41V 60V V-DFN3030- | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 1.9W | V-DFN3030-8 | 2 N-Channel (Dual) | Standard | 60V | 11.4A (Ta) | 17 mOhm @ 8.2A, 10V | 3V @ 250µA | 6.2nC @ 4.5V | 869pF @ 30V | |||
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2,968
Сегодня корабль + бесплатная ночная доставка
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ON Semiconductor | MOSFET 2P-CH 20V 2.3A 6-WDFN | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 710mW | 6-WDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.3A | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | 531pF @ 10V | |||
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1,829
Сегодня корабль + бесплатная ночная доставка
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Texas Instruments | MOSFET 2N-CH 25V 20A 8SON | NexFET™ | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | 6W | 8-LSON (3.3x3.3) | 2 N-Channel (Half Bridge) | Logic Level Gate | 25V | 20A | 9.6 mOhm @ 14A, 8V | 2.1V @ 250µA | 6.2nC @ 4.5V | 920pF @ 12.5V |
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