- Производство :
- Series :
- Package / Case :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
5 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,376
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET 2P-CH 30V 1.8A SSOT6 | PowerTrench® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 700mW | SuperSOT™-6 | 2 P-Channel (Dual) | Logic Level Gate | 30V | 1.8A | 170 mOhm @ 1.8A, 10V | 3V @ 250µA | 3.5nC @ 10V | 190pF @ 15V | |||
|
|
1,719
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 30V 3.5A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.5A | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | |||
|
|
|
2,961
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 30V 3.5A/2.3A 8SO | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100 mOhm @ 2.2A, 10V | 3V @ 250µA | 14nC @ 10V | 190pF @ 15V | |||
|
|
|
3,970
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2P-CH 30V 2.3A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Standard | 30V | 2.3A | 250 mOhm @ 1A, 10V | 1V @ 250µA | 12nC @ 10V | 190pF @ 15V | |||
|
|
|
2,656
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 30V 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V |
Страница 1 / 1
