- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,852
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET 4N-CH 900V 30A SP4 | CoolMOS™ | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 250W | 4 N-Channel (H-Bridge) | Super Junction | 900V | 30A | 120 mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | 6800pF @ 100V | |||
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3,298
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET 4N-CH 600V 49A SP4 | CoolMOS™ | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 250W | 4 N-Channel (H-Bridge) | Super Junction | 600V | 49A | 45 mOhm @ 22.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | 7200pF @ 25V |
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