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ОБРАЗ ЧАСТЬ №. ЦЕНА КОЛИЧЕСТВО АКЦИИ ПРОИЗВОДСТВО ОПИСАНИЕ Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
ZXMN6A11DN8TA
За единицу
$0.96
RFQ
3,696
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Diodes Incorporated MOSFET 2N-CH 60V 2.5A 8-SOIC - Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.8W 8-SO 2 N-Channel (Dual) Logic Level Gate 60V 2.5A 120 mOhm @ 2.5A, 10V 1V @ 250µA (Min) 5.7nC @ 10V 330pF @ 40V
ZXMN6A11DN8TA
За единицу
$0.46
RFQ
3,591
Сегодня корабль + бесплатная ночная доставка
Diodes Incorporated MOSFET 2N-CH 60V 2.5A 8-SOIC - Active Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.8W 8-SOP 2 N-Channel (Dual) Logic Level Gate 60V 2.5A 120 mOhm @ 2.5A, 10V 1V @ 250µA (Min) 5.7nC @ 10V 330pF @ 40V
ZXMN6A11DN8TC
ПОЛУЧИТЬ ЦИТАТЫ
RFQ
2,652
Сегодня корабль + бесплатная ночная доставка
Diodes Incorporated MOSFET 2N-CH 60V 2.5A 8SOIC - Obsolete Tape & Reel (TR) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 1.8W 8-SOP 2 N-Channel (Dual) Logic Level Gate 60V 2.5A 120 mOhm @ 2.5A, 10V 1V @ 250µA (Min) 5.7nC @ 10V 330pF @ 40V