- Производство :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 11.5 mOhm @ 20A, 5V (4)
- 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V (3)
- 14.5 mOhm @ 20A, 5V (4)
- 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V (3)
- 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V (6)
- 4.4 mOhm @ 20A, 5V (7)
- 5.5 mOhm @ 20A, 5V (7)
- 6.3 mOhm @ 20A, 5V (7)
- 60 mOhm @ 4A, 5V (6)
- 70 mOhm @ 2A, 5V (6)
- 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V (7)
- Прикладные фильтры :
61 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,969
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET 2N-CH 8MLP | - | Obsolete | - | - | Surface Mount | Die | - | - | - | - | - | - | - | - | - | ||
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,953
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 80V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Bulk | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5 mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | ||
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,706
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,875
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 80V BUMPED DIE | eGaN® | Active | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | ||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,191
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 60V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,715
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 60V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5 mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | ||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,065
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 30V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | ||
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,395
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | - | Die | - | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | ||
|
|
|
1,289
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | - | Die | - | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
|
|
|
2,284
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 120V 3.4A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | - | Die | - | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
963
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | ||
|
|
|
1,024
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
|
|
|
1,077
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 120V BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,720
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||
|
|
|
1,230
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
|
3,629
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,996
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||
|
|
|
3,995
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
|
2,652
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,385
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 80V 9.5A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5 mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | ||
|
|
|
708
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 80V 9.5A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5 mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | |||
|
|
|
1,008
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 80V 9.5A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5 mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,379
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 2.5nC @ 5V, 10nC @ 5V | 300pF @ 40V, 1100pF @ 40V | ||
|
|
|
1,116
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 2.5nC @ 5V, 10nC @ 5V | 300pF @ 40V, 1100pF @ 40V | |||
|
|
|
3,592
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 2.5nC @ 5V, 10nC @ 5V | 300pF @ 40V, 1100pF @ 40V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,004
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | ||
|
|
|
3,538
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | |||
|
|
|
3,624
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,916
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5 mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | ||
|
|
|
3,514
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN ASYMMETRICAL HALF BRID | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5 mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V |
Страница 1 / 3
