- Производство :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- FET Feature :
- Drain to Source Voltage (Vdss) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Прикладные фильтры :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,426
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | POWER MODULE - SIC | - | Active | Bulk | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | 470W | 2 N-Channel (Dual), Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 74A (Tc) | 50 mOhm @ 40A, 20V | 3V @ 2mA | 272nC @ 20V | 5120pF @ 1000V | |||
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2,153
Сегодня корабль + бесплатная ночная доставка
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Transphorm | CASCODE GAN HB 600V 70A MODULE | - | Last Time Buy | Bulk | -40°C ~ 150°C (TJ) | Through Hole | Module | 470W | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 600V | 70A (Tc) | 34 mOhm @ 30A, 8V | - | 28nC @ 8V | 2260pF @ 100V |
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