- Производство :
- Series :
- Operating Temperature :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,786
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.4A, 9.7A | 22.6 mOhm @ 6.4A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 580pF @ 15V | |||
|
|
1,721
Сегодня корабль + бесплатная ночная доставка
|
Diodes Incorporated | MOSFET ARRAY N-CH 40V 8.6A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Standard | 40V | 8.6A (Ta) | 15 mOhm @ 12A, 10V | 3V @ 250µA | 33nC @ 10V | 1938pF @ 15V | |||
|
|
|
3,201
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 30V 7.6A/11A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.4W, 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A, 11A | 16.2 mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V |
Страница 1 / 1
