- Part Status :
- Packaging :
- Drain to Source Voltage (Vdss) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
12 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
3,637
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 3N-CH BUMPED DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | ||
|
|
|
3,869
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 3N-CH BUMPED DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | |||
|
|
|
3,009
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 3N-CH BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | |||
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,111
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 3N-CH 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | ||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
930
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 3N-CH 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | ||
|
|
|
1,507
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 3N-CH 100V BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,022
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 3 N-CH 100V 9BGA | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | ||
|
|
|
727
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 3 N-CH 100V 9BGA | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | |||
|
|
|
906
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 3 N-CH 100V 9BGA | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 100V | 1.7A, 500mA | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | 16pF @ 50V, 7pF @ 50V | |||
|
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
883
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 3 N-CH 60V/100V 9BGA | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | ||
|
|
|
2,450
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 3 N-CH 60V/100V 9BGA | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | |||
|
|
|
2,295
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 3 N-CH 60V/100V 9BGA | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V |
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