- Производство :
- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
18 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
3,706
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 100V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||
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3,563
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 2N-CH 100V 278A SP4 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 780W | SP4 | 2 N-Channel (Half Bridge) | Standard | 100V | 278A | 5 mOhm @ 125A, 10V | 4V @ 5mA | 700nC @ 10V | 20000pF @ 25V | |||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,720
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||
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|
|
1,230
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
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|
|
3,629
Сегодня корабль + бесплатная ночная доставка
|
EPC | MOSFET 2NCH 100V 23A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,996
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||
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|
|
3,995
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
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|
|
2,652
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | |||
|
|
1,242
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 2N-CH 100V 495A SP6 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 1250W | SP6 | 2 N-Channel (Half Bridge) | Standard | 100V | 495A | 2.5 mOhm @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | 40000pF @ 25V | |||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
793
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYM 100V BUMPED DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70 mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | ||
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|
|
2,869
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYM 100V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70 mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | |||
|
|
|
3,465
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYM 100V BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70 mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | |||
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,910
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 100V BUMPED DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70 mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | ||
|
|
|
3,215
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 100V BUMPED DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70 mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | |||
|
|
|
2,675
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN 2N-CH 100V BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70 mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | |||
|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,281
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET 2N-CH 100V | PowerTrench® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 2.2W | 8-Power 5x6 | 2 N-Channel (Half Bridge) | Standard | 100V | 10.4A | 9.9 mOhm @ 10.4A, 10V | 4V @ 250µA | 31nC @ 10V | 2230pF @ 50V | ||
|
|
|
1,496
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET 2N-CH 100V | PowerTrench® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 2.2W | 8-Power 5x6 | 2 N-Channel (Half Bridge) | Standard | 100V | 10.4A | 9.9 mOhm @ 10.4A, 10V | 4V @ 250µA | 31nC @ 10V | 2230pF @ 50V | |||
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|
|
1,392
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET 2N-CH 100V | PowerTrench® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | 2.2W | 8-Power 5x6 | 2 N-Channel (Half Bridge) | Standard | 100V | 10.4A | 9.9 mOhm @ 10.4A, 10V | 4V @ 250µA | 31nC @ 10V | 2230pF @ 50V |
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