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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies | MOSFET 2N-CH 30V 11A 8PQFN | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 2.7W | 8-PQFN (3.3x3.3), Power33 | 2 N-Channel (Dual) | Logic Level Gate | 30V | 11A | 14.9 mOhm @ 10A, 10V | 2.35V @ 25µA | 15nC @ 10V | 1165pF @ 10V |
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