1 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,793
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 2N-CH 1200V 250A D3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | D-3 Module | 1100W | D3 | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 250A | 10 mOhm @ 200A, 20V | 2.2V @ 10mA (Typ) | 490nC @ 20V | 9500pF @ 1000V |
Страница 1 / 1
