- Производство :
- Part Status :
- Mounting Type :
- FET Feature :
- Drain to Source Voltage (Vdss) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
12 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
1,081
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 2N-CH 800V 28A SP3 | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 277W | SP3 | 2 N-Channel (Dual) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,986
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 2N-CH 800V 28A SP1 | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 277W | SP1 | 2 N-Channel (Half Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | ||
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991
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 4N-CH 1200V 28A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 125W | SP3 | 4 N-Channel (Three Level Inverter) | Standard | 1200V (1.2kV) | 28A | 98 mOhm @ 20A, 20V | 2.2V @ 1mA | 49nC @ 20V | 950pF @ 1000V | |||
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854
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 2N-CH 800V 28A SP4 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 277W | SP4 | 2 N-Channel (Half Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
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1,485
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 6N-CH 800V 28A SP6-P | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 277W | SP6-P | 6 N-Channel (3-Phase Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
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2,999
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 6N-CH 800V 28A SP6P | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 277W | SP6-P | 6 N-Channel (3-Phase Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
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2,429
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 4N-CH 800V 28A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 277W | SP3 | 4 N-Channel (H-Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
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1,907
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 4N-CH 800V 28A SP1 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 277W | SP1 | 4 N-Channel (H-Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
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3,381
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 2N-CH 800V 28A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 277W | SP3 | 2 N-Channel (Dual) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,004
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | ||
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3,538
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | |||
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3,624
Сегодня корабль + бесплатная ночная доставка
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V |
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