- Производство :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ПОЛУЧИТЬ ЦИТАТЫ |
1,274
Сегодня корабль + бесплатная ночная доставка
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Renesas Electronics America | MOSFET 2P-CH 12V 4A 6HUSON | - | Obsolete | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 2.3W | 6-HUSON (2x2) | 2 P-Channel (Dual) | Logic Level Gate, 1.8V Drive | 12V | 4A | 67 mOhm @ 2A, 4.5V | - | 5nC @ 4.5V | 486pF @ 10V | ||
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1,779
Сегодня корабль + бесплатная ночная доставка
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Rohm Semiconductor | MOSFET 2P-CH 12V 4A TSMT8 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 550mW | TSMT8 | 2 P-Channel (Dual) | Logic Level Gate, 1.5V Drive | 12V | 4A | 36 mOhm @ 4A, 4.5V | 1V @ 1mA | 20nC @ 4.5V | 1940pF @ 6V |
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