- Производство :
- Package / Case :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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1,364
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET 4N-CH 1200V 55A SP3F | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 250W | 4 N-Channel (Three Level Inverter) | Standard | 1200V (1.2kV) | 55A | 49 mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | ||||
|
983
Сегодня корабль + бесплатная ночная доставка
|
Microsemi Corporation | MOSFET 2N-CH 1200V 55A SP1 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 250W | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 55A | 49 mOhm @ 40A, 20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | ||||
|
3,992
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET MODULE 1200V 50A | CoolSiC™ | Active | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | 20mW | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | 55A | 23 mOhm @ 50A, 15V | 5.5V @ 20mA | 125nC @ 5V | 3950pF @ 800V |
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