- Производство :
- Series :
- Package / Case :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ПОЛУЧИТЬ ЦИТАТЫ |
3,513
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET 2N-CH 30V 6.2A 8SOIC | FETKY™ | Obsolete | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.2A | 38 mOhm @ 5A, 4.5V | 1V @ 250µA | 10.5nC @ 5V | 780pF @ 16V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,455
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET 2N-CH 20V 6.2A 8TSSOP | - | Obsolete | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 1.39W | 8-TSSOP | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.2A | 22 mOhm @ 7A, 4.5V | 1.2V @ 250µA | 17nC @ 4.5V | 630pF @ 16V |
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