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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ПОЛУЧИТЬ ЦИТАТЫ |
1,303
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET 2P-CH 30V 4.9A 8SOIC | HEXFET® | Obsolete | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | - | 58 mOhm @ 4.9A, 10V | 3V @ 250µA | 34nC @ 10V | 710pF @ 25V | ||
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1,007
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET 2P-CH 30V 4.9A 8SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 30V | - | 58 mOhm @ 4.9A, 10V | 3V @ 250µA | 34nC @ 10V | 710pF @ 25V |
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