- Mounting Type :
- Supplier Device Package :
4 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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1,428
Сегодня корабль + бесплатная ночная доставка
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Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | |||
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3,586
Сегодня корабль + бесплатная ночная доставка
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Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | |||
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3,098
Сегодня корабль + бесплатная ночная доставка
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Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | |||
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839
Сегодня корабль + бесплатная ночная доставка
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Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500 Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V |
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