- Производство :
- Part Status :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
11 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ПОЛУЧИТЬ ЦИТАТЫ |
3,094
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 1V @ 250µA | 44nC @ 10V | 780pF @ 25V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,045
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 1V @ 250µA | 44nC @ 10V | 780pF @ 25V | ||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,144
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | HEXFET® | Obsolete | Tube | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | ||
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|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,625
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Digi-Reel® | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | ||
|
|
|
3,945
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
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|
1,524
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
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|
ПОЛУЧИТЬ ЦИТАТЫ |
871
Сегодня корабль + бесплатная ночная доставка
|
Diodes Incorporated | MOSFET BVDSS: 41V 60V SO-8 T&R 2 | Automotive, AEC-Q101 | Active | Digi-Reel® | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.1W | 8-SO | 2 N-Channel (Dual) | Standard | 60V | 16.7A (Tc) | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 4.2nC @ 4.5V | 584pF @ 25V | ||
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3,762
Сегодня корабль + бесплатная ночная доставка
|
Diodes Incorporated | MOSFET BVDSS: 41V 60V SO-8 T&R 2 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.1W | 8-SO | 2 N-Channel (Dual) | Standard | 60V | 16.7A (Tc) | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 4.2nC @ 4.5V | 584pF @ 25V | |||
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3,513
Сегодня корабль + бесплатная ночная доставка
|
Diodes Incorporated | MOSFET 2 N-CH 60V 16.7A 8SO | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.1W | 8-SO | 2 N-Channel (Dual) | Standard | 60V | 16.7A (Tc) | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 4.2nC @ 4.5V | 584pF @ 25V | |||
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3,389
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N-CH 55V 5.1A | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Standard | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 1V @ 250µA (Min) | 44nC @ 10V | 780pF @ 25V | |||
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|
2,034
Сегодня корабль + бесплатная ночная доставка
|
Diodes Incorporated | MOSFET 2 N-CH 60V 16.7A 8SO | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.1W | 8-SO | 2 N-Channel (Dual) | Standard | 60V | 16.7A (Tc) | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 4.2nC @ 4.5V | 584pF @ 25V |
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