- Part Status :
- FET Feature :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,348
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 694W | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1000V (1kV) | 36A | 270 mOhm @ 18A, 10V | 5V @ 5mA | 308nC @ 10V | 8700pF @ 25V | ||
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1,754
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 694W | 2 N-Channel (Half Bridge) | Standard | 1000V (1kV) | 36A | 270 mOhm @ 18A, 10V | 5V @ 5mA | 308nC @ 10V | 8700pF @ 25V |
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