- Производство :
- Series :
- Part Status :
- Mounting Type :
- Package / Case :
- Drain to Source Voltage (Vdss) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
4 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,742
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET 2N-CH 1200V 14A SP1 | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 357W | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 14A | 960 mOhm @ 12A, 10V | 5V @ 2.5mA | 260nC @ 10V | 6696pF @ 25V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,799
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET 2N-CH 1000V 19A SP1 | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 357W | 2 N-Channel (Half Bridge) | Standard | 1000V (1kV) | 19A | 552 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 6800pF @ 25V | |||
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1,412
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IXYS | MOSFET 4N-CH 100V 75A ECO-PAC2 | HiPerFET™ | Not For New Designs | Bulk | -40°C ~ 150°C (TJ) | Through Hole | ECO-PAC2 | 300W | 4 N-Channel (H-Bridge) | Standard | 100V | 75A | 25 mOhm @ 500mA, 10V | 4V @ 4mA | 260nC @ 10V | 4500pF @ 25V | ||||
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3,175
Сегодня корабль + бесплатная ночная доставка
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Microsemi Corporation | MOSFET 4N-CH 1000V 19A SP3 | POWER MOS 8™ | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 357W | 4 N-Channel (H-Bridge) | Standard | 1000V (1kV) | 19A | 552 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 6800pF @ 25V |
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