- Производство :
- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
8 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,385
Сегодня корабль + бесплатная ночная доставка
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Infineon Technologies | MOSFET 2N-CH 20V 8.9A 8-SOIC | HEXFET® | Obsolete | Tube | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | |||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,825
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 20V 8.9A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | |||
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,665
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 20V 8.9A 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | |||
|
2,732
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 20V 8.9A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | ||||
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,225
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET 2P-CH 20V 3.1A MICROFET | PowerTrench® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 700mW | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.1A | 95 mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 540pF @ 10V | |||
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761
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET 2P-CH 20V 3.1A MICROFET | PowerTrench® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 700mW | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.1A | 95 mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 540pF @ 10V | ||||
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3,699
Сегодня корабль + бесплатная ночная доставка
|
ON Semiconductor | MOSFET 2P-CH 20V 3.1A MICROFET | PowerTrench® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | 700mW | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.1A | 95 mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 540pF @ 10V | ||||
|
2,493
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 20V 8.9A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V |
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