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| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Microsemi Corporation | MOSFET 4N-CH 1200V 8A SP1 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 208W | 4 N-Channel (H-Bridge) | Standard | 1200V (1.2kV) | 8A | 1.68 Ohm @ 7A, 10V | 5V @ 1mA | 145nC @ 10V | 3812pF @ 25V |
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