- Part Status :
- Operating Temperature :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,093
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8SOIC | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | |||
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,361
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
|
ПОЛУЧИТЬ ЦИТАТЫ |
3,094
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 1V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
|
ПОЛУЧИТЬ ЦИТАТЫ |
704
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2N-CH 55V 4.7A 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 4.7A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,345
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
|
ПОЛУЧИТЬ ЦИТАТЫ |
2,823
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET N/P-CH 55V 4.7/3.4A 8SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Logic Level Gate | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | |||
|
ПОЛУЧИТЬ ЦИТАТЫ |
1,945
Сегодня корабль + бесплатная ночная доставка
|
Infineon Technologies | MOSFET 2P-CH 55V 3.4A 8-SOIC | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105 mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V |
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