- Package / Case :
- Power - Max :
- Drain to Source Voltage (Vdss) :
2 продукты
| ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,618
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Toshiba Semiconductor and Storage | MOSFET 2 N-CHANNEL 20V 250MA US6 | - | Active | Digi-Reel® | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 285mW (Ta) | US6 | 2 N-Channel (Dual) | Standard | 20V | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
2,016
Сегодня корабль + бесплатная ночная доставка
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Toshiba Semiconductor and Storage | MOSFET 2 N-CHANNEL 20V 250MA ES6 | - | Active | Digi-Reel® | 150°C | Surface Mount | SOT-563, SOT-666 | 250mW | ES6 | 2 N-Channel (Dual) | Standard | 2000V (2kV) | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V |
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