- Packaging :
- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
3 продукты
ОБРАЗ | ЧАСТЬ №. | ЦЕНА | КОЛИЧЕСТВО | АКЦИИ | ПРОИЗВОДСТВО | ОПИСАНИЕ | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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ПОЛУЧИТЬ ЦИТАТЫ |
2,180
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Renesas Electronics America | MOSFET N-CH 55V 90A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | TO-262-3 | 1.8W (Ta), 176W (Tc) | N-Channel | 55V | 90A (Tc) | 3.8 mOhm @ 45A, 10V | 4V @ 250µA | 120nC @ 10V | 7350pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
1,706
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Renesas Electronics America | MOSFET N-CH 55V 90A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3 | 1.8W (Ta), 176W (Tc) | N-Channel | 55V | 90A (Tc) | 3.8 mOhm @ 45A, 10V | 4V @ 250µA | 120nC @ 10V | 7350pF @ 25V | 10V | ±20V | ||
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ПОЛУЧИТЬ ЦИТАТЫ |
3,464
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Renesas Electronics America | MOSFET N-CH 55V 100A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 1.8W (Ta), 176W (Tc) | N-Channel | 55V | 100A (Tc) | 3.25 mOhm @ 50A, 10V | 4V @ 250µA | 120nC @ 10V | 7350pF @ 25V | 10V | ±20V |
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